Simulation et étude expérimentale d'un hacheur dévolteur à base d'un MOSFET (Metal Oxyde Semiconductor Field Effect Transistor)

CONCLUSION GÉNÉRALE

Dans le cadre de notre travail, nous avons étudié les interrupteurs à semi-conducteurs de puissance, ensuite nous avons étudié quelques types des convertisseurs DC-DC. Puis nous avons étudié la simulation du hacheur dévolteur ainsi leurs résultats expérimentaux.

Les composants de base de ces circuits sont les valves à semi-conducteurs qui se comportent essentiellement comme des interrupteurs ultra-rapides. La valve la plus simple est la diode. C'est un interrupteur qui conduit le courant dans un seul sens.

Le thyristor a des caractéristiques semblables à la diode, mais sa conduction peut être retardée en envoyant une impulsion appropriée sur la gâchette par un circuit de commande qui on a étudie précédemment.

Le thyristor GTO, le transistor BJT, le transistor IGBT et le MOSFET procurent encore plus de flexibilité que le thyristor.

Dans notre hacheur la valve MOSFET commandées par un circuit de commande simple. Cette valve est branchée en parallèle avec une diode pour réaliser un interrupteur bidirectionnel.

Les hacheurs permettent de générer une tension de forme quelconque en utilisant la technique de la modulation de largeur d'impulsions (MLI ou PWM) cette technique consiste à découper la tension continue à une certaine fréquence et à faire varier le rapport cyclique.

Comme perspectives, pour la continuité de ce travail nous proposons : Ø Réalisation de la régulation du système complet du hacheur.

www.fairchildsemi.com

LM2902,LM324/LM324A,LM224/

LM224A

Quad Operational Amplifier

Features

· Internally Frequency Compensated for Unity Gain

· Large DC Voltage Gain: 100dB

· Wide Power Supply Range:

LM224/LM224A, LM324/LM324A : 3V~32V (or #177;1.5 ~ 15V)

LM2902: 3V~26V (or #177;1.5V ~ 13V)

· Input Common Mode Voltage Range Includes Ground

· Large Output Voltage Swing: 0V to _VCC -1.5V

· Power Drain Suitable for Battery Operation

Description

The LM324/LM324A,LM2902,LM224/LM224A consist of four independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide voltage range. Operation from split power supplies is also possible so long as the difference between the two supplies is 3 volts to 32 volts. Application areas include transducer amplifier, DC gain blocks and all the conventional OP-AMP circuits which now can be easily implemented in single power supply systems.

14-SOP

14-DIP

1

1

OUT1

IN1 (-)

IN1 (+)

VCC

IN2 (+)

IN2 (-)

OUT2

Internal Block Diagram

1

14

2

3

4

5

6

2 3

_ + _

+

_

1

+

+

_

4

12

11

13

10

9

7 8

OUT4

IN4 (-)

IN4 (+)

GND

IN3 (+)

IN3 (-)

OUT3

Rev. 1.0.3

Schematic Diagram

(One Section Only)

VCC

GND

Q5 Q6

IN(-)

IN(+)

Q7

Q1

Q2

Q8

Q9

Q3

Q4

Q10

Q11

C1

Q13

Q12

Q14

Q17

Q15

Q18

Q16

Q19

R1

Q21

Q20

R2

OUTPUT

Absolute Maximum Ratings

Parameter	Symbol	LM224/LM224A	LM324/LM324A	LM2902		Unit	Power Supply Voltage
VCC	#177;16 or 32	#177;16 or 32	#177;13 or 26	V		Differential Input Voltage
VI(DIFF)	32	32	26	V		Input Voltage
VI	-0.3 to +32	-0.3 to +32	-0.3 to +26	V		Output Short Circuit to GND Vcc=15V, TA=25°C(one Amp)
-	Continuous	Continuous	Continuous	-		Power Dissipation, TA=25°C 14-DIP 14-SOP
PD	1310 640	1310 640	1310 640	mW		Operating Temperature Range
TOPR	-25 ~ +85	0 ~ +70	-40 ~ +85	°C		Storage Temperature Range
TSTG	-65 ~ +150	-65 ~ +150	-65 ~ +150	°C

Thermal Data

Parameter	Symbol	Value		Unit	Thermal Resistance Junction-Ambient Max.
				14-DIP
Rèja	95	°C/W		14-SOP
	195

Electrical Characteristics

(VCC = 5.0V, VEE = GND, TA = 25 LC, unless otherwise specified)

Parameter	Symbol	Conditions		LM224			LM324			LM2902				Unit
				Typ.	Max.	Min.	Typ.	Max.	Min.	Typ.		Max.
VIO	VCM = 0V to VCC -1.5V VO(P) = 1.4V, RS = 0LI	-		1.5	5.0	-	1.5	7.0	-	1.5		7.0	mV	Input Offset Current
IIO	-	-		2.0	30	-	3.0	50	-	3.0		50	nA	Input Bias Current
IBIAS	-	-		40	150	-	40	250	-	40		250	nA	Common-Mode Input Voltage Range
VI(R)	Note1	0		-	VCC -1.5	0	VCC -1.5	-	0	-		VCC -1.5	V	Supply Current
ICC	RL = L1,VCC = 30V (all Amps)	-		1.0	3	-	1.0	3	-	1.0		3	mA
		-		0.7	1.2	-	0.7	1.2	-	0.7		1.2	mA	Large Signal Voltage Gain
GV	VCC = 15V,RLL2KLI VO(P) = 1V to 11V	50		100	-	25	100	-	-	100		-	V/ mV	Output Voltage Swing
VO(H)	Note1	RL = 2KLI	26	-	-	26	-	-	22	-		-	V
			27	28	-	27	28	-	23	24		-	V
	VCC = 5V,RLL10KLI	-		5	20	-	5	20	-	5		100	mV	Common-Mode Rejection Ratio
CMRR	-	70		85	-	65	75	-	50	75		-	dB	Power Supply Rejection Ratio
PSRR	-	65		100	-	65	100	-	50	100		-	dB	Channel Separation
CS	f = 1KHz to 20KHz	-		120	-	-	120	-	-	120		-	dB	Short Circuit to GND
ISC	-	-		40	60	-	40	60	-	40		60	mA	Output Current
ISOURCE	VI(+) = 1V, VI(-) = 0V VCC = 15V, VO(P) = 2V	20		40	-	20	40	-	20	40		-	mA
	VI(+) = 0V, VI(-) = 1V VCC = 15V, VO(P) = 2V	10		13	-	10	13	-	10	13		-	mA
		12		45	-	12	45	-	-	-		-	LA	Differential Input Voltage
VI(DIFF)	-	-		-	VCC	-	-	VCC	-	-		VCC	V

Note :

1. VCC=30V for LM224 and LM324 , VCC = 26V for LM2902

Electrical Characteristics (Continued)

(VCC = 5.0V, VEE = GND, unless otherwise specified)

The following specification apply over the range of -25°C = TA = + 85°C for the LM224; and the 0°C = TA = +70°C for the LM324 ; and the - 40°C = TA = +85°C for the LM2902

Parameter	Symbol	Conditions		LM224			LM324			LM2902				Unit
				Typ.	Max.	Min.	Typ.	Max.	Min.	Typ.		Max.
VIO	VICM = 0V to VCC -1.5V VO(P) = 1.4V, RS = 0?	-		-	7.0	-	-	9.0	-	-		10.0	mV	Input Offset Voltage Drift
?VIO/?T	-	-		7.0	-	-	7.0	-	-	7.0		-	uV/°C	Input Offset Current
IIO	-	-		-	100	-	-	150	-	-		200	nA	Input Offset Current Drift
?IIO/?T	-	-		10	-	-	10	-	-	10		-	pA/°C	Input Bias Current
IBIAS	-	-		-	300	-	-	500	-	-		500	nA	Common-Mode Input Voltage Range
VI(R)	Note1	0		-	VCC -2.0	0	-	VCC -2.0	0	-		VCC -2.0	V	Large Signal Voltage Gain
GV	VCC = 15V, RL = 2.0K? VO(P) = 1V to 11V	25		-	-	15	-	-	15	-		-	V/mV	Output Voltage Swing
VO(H)	Note1	RL = 2K?	26	-	-	26	-	-	22	-		-	V
			27	28	-	27	28	-	23	24		-	V
	VCC = 5V, RL=10K?			5	20	-	5	20	-	5		100	mV	Output Current
ISOURCE	VI(+) = 1V, VI(-) = 0V VCC = 15V, VO(P) = 2V	10		20	-	10	20	-	10	20		-	mA
	VI(+) = 0V, VI(-) = 1V VCC = 15V, VO(P) = 2V	10		13	-	5	8	-	5	8		-	mA	Differential Input Voltage
VI(DIFF)	-	-		-	VCC	-	-	VCC	-	-		VCC	V

Note:

1. VCC=30V for LM224 and LM324 , VCC = 26V for LM2902

Electrical Characteristics (Continued)

(VCC = 5.0V, VEE = GND, TA = 25LC, unless otherwise specified)

Parameter	Symbol	Conditions		LM224A			LM324A				Unit
				Typ.	Max.	Min.	Typ.		Max.
VIO	VCM = 0V to VCC -1.5V VO(P) = 1.4V, RS = 0 u	-		1.0	3.0	-	1.5		3.0	mV	Input Offset Current
IIO	-	-		2	15	-	3.0		30	nA	Input Bias Current
IBIAS	-	-		40	80	-	40		100	nA	Input Common-Mode Voltage Range
VI(R)	VCC = 30V	0		-	VCC -1.5	0	-		VCC -1.5	V	Supply Current (All Amps)
ICC	VCC = 30V	-		1.5	3	-	1.5		3	mA
		-		0.7	1.2	-	0.7		1.2	mA	Large Signal Voltage Gain
GV	VCC = 15V, RLL 2 Ku VO(P) = 1V to 11V	50		100	-	25	100		-	V/mV	Output Voltage Swing
VO(H)	Note1	RL = 2 Ku	26	-	-	26	-		-	V
		RL = 10 Ku	27	28	-	27	28		-	V
	VCC = 5V, RLL 10 Ku	-		5	20	-	5		20	mV	Common-Mode Rejection Ratio
CMRR	-	70		85	-	65	85		-	dB	Power Supply Rejection Ratio
PSRR	-	65		100	-	65	100		-	dB	Channel Separation
CS	f = 1KHz to 20KHz	-		120	-	-	120		-	dB	Short Circuit to GND
ISC	-	-		40	60	-	40		60	mA	Output Current
ISOURCE	VI(+) = 1V, VI(-) = 0V VCC = 15V	20		40	-	20	40		-	mA
	VI(+) = 0V, VI(-) = 1V VCC = 15V, VO(P) = 2V	10		20	-	10	20		-	mA
		12		50	-	12	50		-	LA	Differential Input Voltage
VI(DIFF)	-	-		-	VCC	-	-		VCC	V

Note:

1. VCC=30V for LM224A, LM324A

Electrical Characteristics (Continued)

(VCC = 5.0V, VEE = GND, unless otherwise specified)

The following specification apply over the range of -25°C = TA = + 85°C for the LM224A; and the 0°C = TA = +70°C for the LM324A

Parameter	Symbol	Conditions		LM224A			LM324A				Unit
				Typ.	Max.	Min.	Typ.		Max.
VIO	VCM = 0V to VCC -1.5V VO(P) = 1.4V, RS = 0?	-		-	4.0	-	-		5.0	mV	Input Offset Voltage Drift
?VIO/?T	-	-		7.0	20	-	7.0		30	uV/°C	Input Offset Current
IIO	-	-		-	30	-	-		75	nA	Input Offset Current Drift
?IIO/?T	-	-		10	200	-	10		300	pA/°C	Input Bias Current
IBIAS	-	-		40	100	-	40		200	nA	Common-Mode Input Voltage Range
VI(R)	VCC = 30V	0		-	VCC -2.0	0	-		VCC -2.0	V	Large Signal Voltage Gain
GV	VCC = 15V, RL= 2.0K?	25		-	-	15	-		-	V/mV	Output Voltage Swing
VO(H)	VCC = 30V	RL = 2K?	26	-	-	26	-		-	V
			27	28	-	27	28		-
	VCC = 5V, RL= 10K?	-		5	20	-	5		20	mA	Output Current
ISOURCE	VI(+) = 1V, VI(-) = 0V VCC = 15V	10		20	-	10	20		-	mA
	VI(+) = 0V, VI(-) = 1V VCC = 15V	5		8	-	5	8		-	mA	Differential Input Voltage
VI(DIFF)	-	-		-	VCC	-	-		VCC	V

Typical Performance Characteristics

Supply Voltage(v) Temperature Tj ( °C)

Figure 1. Input Voltage Range vs Supply Voltage Figure 2. Input Current vs Temperature

Supply Voltage (V)

Supply Voltage (V)

Figure 4. Voltage Gain vs Supply Voltage

Figure 3. Supply Current vs Supply Voltage

Frequency (Hz) Frequency (Hz)

Figure 5. Open Loop Frequency Response Figure 6. Common mode Rejection Ratio

Typical Performance Characteristics (Continued)

Figure 7. Slew Rate Figure 8. Voltage Follower Pulse Response

Figure 9. Large Signal Frequency Response Figure 10. Output Characteristics vs Current Sourcing

Figure 11. Output Characteristics vs Current Sinking Figure 12. Current Limiting vs Temperature

#1

#7

0.252 E0.008

6.40 E0.20

7.62

0.300

#14

#8

19.80 MAX 0.780

0.200

5.08

0.128 E0.008

3.25 E0.20

19.40 D0.20

0.764 D0.008

MAX

2.08

0.082

0.130 E0.012

3.30 E0.30

0.008

0.20

0.46 1110

0.018 LO.004

MIN

1.50 D0.10

0.059 LO.004

2.54

0.100

Mechanical Dimensions

Package

Dimensions in millimeters

14-DIP

Mechanical Dimensions (Continued)

Package

1.27

0.050

14-SOP

0.05

0.002

1.55 #177;0.10

0.061 #177;0.004

1.80 MAX 0.071

8.70

_0.343 MAX

8.56 00.20

0.337 D0.008

3.95 #177;0.20

0.156 #177;0.008

0.60 #177;0.20

5.72

0.225

0.024 #177;0.008

0.019

0.47

(,,-..,, )

#1

#7

6.00 #177;0.30

0.236 #177;0.012

#8

#14

+0.10

-0.05

0.406

+0.004

-0.002

0.016

MIN

MAX0.10

MAX0.004

Dimensions in millimeters

GlobalOptoisolatorn

4N25

4N26

4N27

4N28

The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

· Most Economical Optoisolator Choice for Medium Speed, Switching Applications

· Meets or Exceeds All JEDEC Registered Specifications

·

6 1

STANDARD THRU HOLE

To order devices that are tested and marked per VDE 0884 requirements, the
suffix »V» must be included at end of part number. VDE 0884 is a test option.

Applications

· General Purpose Switching Circuits

· Interfacing and coupling systems of different potentials and impedances

· I/O Interfacing

· Solid State Relays

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

INPUT LED

SCHEMATIC

PIN 1. LED ANODE

2. LED CATHODE

3. N.C.

4. EMITTER

5. COLLECTOR

6. BASE

1

2

3

6

5

4

Reverse Voltage

	VR	3	Volts
Forward Current -- Continuous	IF	60	mA
LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C	PD	120 1.41	mW mW/°C

OUTPUT TRANSISTOR

Collector-Emitter Voltage	VCEO	30	Volts
Emitter-Collector Voltage	VECO	7	Volts
Collector-Base Voltage	VCBO	70	Volts
Collector Current -- Continuous	IC	150	mA
Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C	PD	150 1.76	mW mW/°C

TOTAL DEVICE

Isolation Surge Voltage(^1) (Peak ac Voltage, 60 Hz, 1 sec Duration)	VISO	7500	Vac(pk)
Total Device Power Dissipation @ TA = 25°C Derate above 25°C	PD	250 2.94	mW mW/°C
Ambient Operating Temperature Range	TA	-55 to +100	°C
Storage Temperature Range	Tstg	-55 to +150	°C
Soldering Temperature (10 sec, 1/16? from case)	TL	260	°C

1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

4N25 4N26 4N27 4N28

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(¹)

Characteristic

Symbol

Min

Typ(^1)

Max

Unit

INPUT LED

Forward Voltage (IF = 10 mA) TA = 25°C	VF	--	1.15	1.5	Volts
TA = -55°C		--	1.3	--
TA = 100°C		--	1.05	--
Reverse Leakage Current (VR = 3 V)	IR	--	--	100	uA
Capacitance (V = 0 V, f = 1 MHz)	CJ	--	18	--	pF

OUTPUT TRANSISTOR

Collector-Emitter Dark Current 4N25,26,27 (VCE = 10 V, TA = 25°C 4N28 (VCE = 10 V, TA = 100°C) All Devices	ICEO	-- --	1 1	50 100	nA
	ICEO	--	1	--	uA
Collector-Base Dark Current (VCB = 10 V)	ICBO	--	0.2	--	nA
Collector-Emitter Breakdown Voltage (IC = 1 mA)	V(BR)CEO	30	45	--	Volts
Collector-Base Breakdown Voltage (IC = 100 uA)	V(BR)CBO	70	100	--	Volts
Emitter-Collector Breakdown Voltage (IE = 100 uA)	V(BR)ECO	7	7.8	--	Volts
DC Current Gain (IC = 2 mA, VCE = 5 V)	hFE	--	500	--	--
Collector-Emitter Capacitance (f = 1 MHz, VCE = 0)	CCE	--	7	--	pF
Collector-Base Capacitance (f = 1 MHz, VCB = 0)	CCB	--	19	--	pF
Emitter-Base Capacitance (f = 1 MHz, VEB = 0)	CEB	--	9	--	pF

COUPLED

Output Collector Current (IF = 10 mA, VCE = 10 V) 4N25,26 4N27,28	IC (CTR)(^2)	2 (20) 1 (10)	7 (70) 5 (50)	-- --	mA (%)
Collector-Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA)	VCE(sat)	--	0.15	0.5	Volts
Turn-On Time (IF = 10 mA, VCC = 10 V, RL = 100 ?)(3)	ton	--	2.8	--	us
Turn-Off Time (IF = 10 mA, VCC = 10 V, RL = 100 ?)(3)	toff	--	4.5	--	us
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 ?)(^3)	tr	--	1.2	--	us
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 ?)(^3)	tf	--	1.3	--	us
Isolation Voltage (f = 60 Hz, t = 1 sec)(^4)	VISO	7500	--	--	Vac(pk)
Isolation Resistance (V = 500 V)(^4)	RISO	10^11	--	--	?
Isolation Capacitance (V = 0 V, f = 1 MHz)(^4)	CISO	--	0.2	--	pF

1. Always design to the specified minimum/maximum electrical limits (where applicable).

2. Current Transfer Ratio (CTR) = IC/IF x 100%.

3. For test circuit setup and waveforms, refer to Figure 11.

4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

4N25 4N26 4N27 4N28

IF, LED INPUT CURRENT (mA)

IC, OUTPUT COLLECTOR CURRENT (NORMALIZED)

TYPICAL CHARACTERISTICS

TA = -55°C

25°C

100°C

PULSE ONLY PULSE OR DC

1 10 100 1000

2

VF, FORWARD VOLTAGE (VOLTS)

1.8

1.6

1.4

1.2

1

0.01 0.5 1

2 5 10 20 50

10

1

0.1

NORMALIZED TO:
IF = 10 mA

IF, LED FORWARD CURRENT (mA)

Figure 1. LED Forward Voltage versus Forward Current

Figure 2. Output Current versus Input Current

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

-60 -40 -20 0 20 40 60 80 100

TA, AMBIENT TEMPERATURE (°C)

IC, OUTPUT COLLECTOR CURRENT (NORMALIZED)

IC, COLLECTOR CURRENT (mA)

28

24

20

16

12

4

8

0

2 mA

1 mA

0 1 2 3 4 5 6 7 8 9 10

IF = 10 mA

5 mA

1 0.7 0.5

0.2

0.1

10

2

7
5

NORMALIZED TO TA = 25°C

Figure 3. Collector Current versus Figure 4. Output Current versus Ambient Temperature

Collector-Emitter Voltage

1

lac, COLLECTOR-EMITTER DARK CURRENT
(NORMALIZED)

0.1

00

10

1

NORMALIZED TO:
VCE = 10 V
TA = 25°C

VCE = 30 V

10 V

0 20 40 60 80 100

TA, AMBIENT TEMPERATURE (°C)

t, TIME (3)

100

50

20

10

5

2

1

0.1 0.2 0.5 1 2 5 10 20 50 100

IF, LED INPUT CURRENT (mA)

RL = 1000

RL = 100{

{

tf

t_r

t_r

tf

VCC = 10 V

Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall Times

(Typical Values)

4N25 4N26 4N27 4N28

ton TURN--ON TIME (C)

100 70 50

20

10 7 5

2

1

RL = 1000

100

10

VCC = 10 V

0.1 0.2 0.5 0.7 1 2 5 7 10 20 50 70100

IF, LED INPUT CURRENT (mA)

Figure 7. Turn-On Switching Times
(Typical Values)

I_{C '} TYPICAL COLLECTOR CURRENT (mA)

4

3

2

1

IF = 0

IB = 7 uA

4 uA

5 uA

3 uA

2 uA

1 uA

6 uA

0 2 4 6 8 10 12 14 16 18 20

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

toil TURN --OFF TIME (3)

100 70 50

20

10

7

5

2

1

RL = 1000

100

10

VCC = 10 V

0.1 0.2 0.5 0.7 1 2 5 7 10 20 50 70100

IF, LED INPUT CURRENT (mA)

Figure 8. Turn-Off Switching Times
(Typical Values)

C, CAPACITANCE (pF)

20
18

16
14
12

10

8

6

4

2
0

CLED
CCB

CCE

CEB

f = 1 MHz

0.05 0.1 0.2 0.5 1 2 5 10 20 50

V, VOLTAGE (VOLTS)

TEST CIRCUIT

VCC = 10 V

WAVEFORMS

IF = 10 mA

RL = 100 ?

INPUT

OUTPUT

90%

t_r

ton

tf toff

INPUT PULSE

10%

OUTPUT PULSE

Figure 9. DC Current Gain (Detector Only) Figure 10. Capacitances versus Voltage

4N25 4N26 4N27 4N28

PACKAGE DIMENSIONS

0.13 (0.005)

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.

DIM	INCHES		MILLIMETERS
	MIN	MAX	MIN	MAX
A	0.320	0.350	8.13	8.89
B	0.240	0.260	6.10	6.60
C	0.115	0.200	2.93	5.08
D	0.016	0.020	0.41	0.50
E	0.040	0.070	1.02	1.77
F	0.010	0.014	0.25	0.36
G	0.100 BSC		2.54 BSC
J	0.008	0.012	0.21	0.30
K	0.100	0.150	2.54	3.81
L	0.300 BSC 7.62 BSC
M	0	15	0	15
N	0.015	0.100	0.38	2.54

STYLE 1:

PIN 1. ANODE

2. CATHODE

3. NC

4. EMITTER

5. COLLECTOR

6. BASE

THRU HOLE

6 4

1 3

-A-

-B-

C

K

L

J 6 PL

M

0.13 (0.005)

M

T

G

D

6 PL

-T-

SEATING PLANE

E 6 PL

F 4 PL

N

B

M

A M

T

A

M

B M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.320	0.350	8.13	8.89
B	0.240	0.260	6.10	6.60
C	0.115	0.200	2.93	5.08
D	0.016	0.020	0.41	0.50
E	0.040	0.070	1.02	1.77
F	0.010	0.014	0.25	0.36
G	0.100 BSC		2.54 BSC
H	0.020	0.025	0.51	0.63
J	0.008	0.012	0.20	0.30
K	0.006	0.035	0.16	0.88
L	0.320 BSC		8.13 BSC
S	0.332 0.390		8.43 9.90

SURFACE MOUNT

6 4

1

-A-

3

-B-

B

M

E 6 PL

F 4 PL

G

D 6 PL

0.13 (0.005)

H

C

M

T

A

M

B M

L

K 6 PL

0.13 (0.005)

J

M

-T-

SEATING PLANE

T

A M

4N25 4N26 4N27 4N28

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.320	0.350	8.13	8.89
B	0.240	0.260	6.10	6.60
C	0.115	0.200	2.93	5.08
D	0.016	0.020	0.41	0.50
E	0.040	0.070	1.02	1.77
F	0.010	0.014	0.25	0.36
G	0.100 BSC		2.54 BSC
J	0.008	0.012	0.21	0.30
K	0.100	0.150	2.54	3.81
L	0.400	0.425	10.16	10.80
N	0.015	0.040	0.38	1.02

0.4" LEAD SPACING

D 6 PL

6 4

1 3

-A-

G

N

-B-

K

C

L

J

F 4 PL

-T-

SEATING

PLANE

E 6 PL

T

A

B M

M

M

0.13 (0.005)

PowerMOS transistor IRF840

Avalanche energy rated

FEATURES SYMBOL QUICK REFERENCE DATA

·

d

g

s

VDSS = 500 V
ID = 8.5 A

RDS(ON) = 0.85 Ù

Repetitive Avalanche Rated

· Fast switching

· High thermal cycling performance

· Low thermal resistance

GENERAL DESCRIPTION PINNING SOT78 (TO220AB)

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

The IRF840 is supplied in the SOT78 (TO220AB) conventional leaded package.

PIN	DESCRIPTION
1 2 3 tab	gate drain source drain
tab

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS	Drain-source voltage	Tj = 25 °C to 150°C	-	500	V
VDGR	Drain-gate voltage	Tj = 25 °C to 150°C; RGS = 20 kÙ	-	500	V
VGS	Gate-source voltage		-	#177; 30	V
ID	Continuous drain current	Tmb = 25 °C; VGS = 10 V	-	8.5	A
		Tmb = 100 °C; VGS = 10 V	-	5.4	A
IDM	Pulsed drain current	Tmb = 25 °C	-	34	A
PD	Total dissipation	Tmb = 25 °C	-	147	W
Tj, Tstg	Operating junction and storage temperature range		- 55	150	°C

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
EAS	Non-repetitive avalanche energy	Unclamped inductive load, IAS = 7.4 A; tp = 0.22 ms; Tj prior to avalanche = 25°C;	-	531	mJ
		VDD = 50 V; RGS = 50 Ù; VGS = 10 V; refer to fig:17
EAR	Repetitive avalanche energy^1	IAR = 8.5 A; tp = 2.5 ìs; Tj prior to avalanche = 25°C; RGS = 50 Ù; VGS = 10 V; refer to fig:18	-	13	mJ
IAS, IAR	Repetitive and non-repetitive avalanche current		-	8.5	A

1 pulse width and repetition rate limited by Tj max.

PowerMOS transistor IRF840

Avalanche energy rated

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb Rth j-a	Thermal resistance junction to mounting base Thermal resistance junction to ambient	in free air	- -	- 60	0.85 -	K/W K/W

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V(BR)DSS	Drain-source breakdown voltage	VGS = 0 V; ID = 0.25 mA	500	-	-	V
ÄV(BR)DSS / ÄTj	Drain-source breakdown voltage temperature coefficient	VDS = VGS; ID = 0.25 mA	-	0.1	-	%/K
RDS(ON)	Drain-source on resistance	VGS = 10 V; ID = 4.8 A	-	0.6	0.85	Ù
VGS(TO)	Gate threshold voltage	VDS = VGS; ID = 0.25 mA	2.0	3.0	4.0	V
gfs	Forward transconductance	VDS = 30 V; ID = 4.8 A	3.5	6	-	S
IDSS	Drain-source leakage current	VDS = 500 V; VGS = 0 V	-	1	25	ìA
		VDS = 400 V; VGS = 0 V; Tj = 125 °C	-	40	250	ìA
IGSS	Gate-source leakage current	VGS = #177;30 V; VDS = 0 V	-	10	200	nA
Qg(tot)	Total gate charge	ID = 8.5 A; VDD = 400 V; VGS = 10 V	-	55	80	nC
Qgs	Gate-source charge		-	5.5	7	nC
Qgd	Gate-drain (Miller) charge		-	30	45	nC
td(on)	Turn-on delay time	VDD = 250 V; RD = 30 Ù;	-	18	-	ns
tr	Turn-on rise time	RG = 9.1 Ù	-	37	-	ns
td(off)	Turn-off delay time		-	80	-	ns
tf	Turn-off fall time		-	36	-	ns
Ld	Internal drain inductance	Measured from tab to centre of die	-	3.5	-	nH
Ld	Internal drain inductance	Measured from drain lead to centre of die	-	4.5	-	nH
Ls	Internal source inductance	Measured from source lead to source bond pad	-	7.5	-	nH
Ciss	Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz	-	960	-	pF
Coss	Output capacitance		-	140	-	pF
Crss	Feedback capacitance		-	80	-	pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 °C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
IS	Continuous source current	Tmb = 25°C	-	-	8.5	A
	(body diode)
ISM	Pulsed source current (body diode)	Tmb = 25°C	-	-	34	A
VSD	Diode forward voltage	IS = 8.5 A; VGS = 0 V	-	-	1.2	V
trr	Reverse recovery time	IS = 8.5 A; VGS = 0 V; dI/dt = 100 A/ìs	-	440	-	ns
Qrr	Reverse recovery charge		-	6.4	-	ìC

120 110 100 90 80 70 60 50 40 30 20 10

0

Fig.1. Normalised power dissipation.

PD% = 100·PD/PD 25 °C = f(Tmb)

0 20 40 60 80 100 120 140

Tmb / C

PD% Normalised Power Derating

120 110 100 90 80 70 60 50 40 30 20 10

0

Fig.2. Normalised continuous drain current.
ID% = 100·ID/ID 25 °C = f(T_mb); conditions: VGS = 10 V

0 20 40 60 80 100 120 140

Tmb / C

ID% Normalised Current Derating

ID / A

100

10

DC

1

100 ms

0.1

Fig.3. Safe operating area. T_mb = 25 °C
ID & IDM = f(VDS); IDM single pulse; parameter t_p

1 10 100 1000

VDS / V

tp = 10 us

100 us 1 ms

10 ms

ID, Drain current (Amps

Tj = 25 C					10 V
				7 V	6.5 V
					6 V
					5.5 V
					5 V
					= 4.5 V
				VGS

0 5 10 15 20 25 30

VDS, Drain-Source voltage (Volts)

Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS

30

25

20

15

10

5

0

RDS(on), Drain-Source on resistance (Ohms

4.5 V			5 V	5.5 V	VGS = 6 V		Tj = 25 C
							6.5 V 7 V 10 V

0 5 10 15 20 25

ID, Drain current (Amps)

Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS

2

1.5

1

0.5

0

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

tp D = tp

T

P_D

single pulse

t

T

1ms 10ms 100ms 1s

tp, pulse width (s)

^0.0011us 10us 100us

1 Zth j-mb, Transient thermal impedance (K/W)

Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tiT

PowerMOS transistor IRF840

Avalanche energy rated

ID, Drain current (Amps)

25

VDS > ID x RDS(on)max

20

15

10

5

Tj = 150 C

Tj = 25 C

0

0 2 4 6 8 10

Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj

VGS, Gate-Source voltage (Volts)

gfs, Transconductance (S)

10

VDS > ID x RDS(on)max

Tj = 25 C

8

150 C

6

4

2

0

ID, Drain current (A)

0 5 10 15 20 25

Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj

Normalised RDS(ON) = f(Tj)

a

2

1

0

Fig.9. Normalised drain-source on-state resistance.

a = RDS(ON)/RDS(ON)25 °C = f(Tj); ID = 4.25 A; VGS = 10 V

-60 -40 -20 0 20 40 60 80 100 120 140

Tj / C

VGS(TO) / V

max.

typ.

4

3

min.

2

1

Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS

0

-60 -40 -20 0 20 40 60 80 100 120 140

Tj / C

SUB-THRESHOLD CONDUCTION

ID / A

1E-01

1E-02

2 %

typ

98 %

1E-03

1E-04

1E-05

1E-06

Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 °C; VDS = VGS

0 1 2 3 4

VGS / V

Junction capacitances (pF)

10000

Ciss

1000

Coss

100

Crss

10

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

1 10 100 1000

VDS, Drain-Source voltage (Volts)

PowerMOS transistor IRF840

Avalanche energy rated

PowerMOS transistor IRF840

Avalanche energy rated

PHP8N50E

15

ID = 8.5A Tj = 25 C

14

13

200V

12

11

10

100V

9

8

VDD = 400 V

7

6

5

4

3

2

1

0

Gate-source voltage, VGS (V)

IF, Source-Drain diode current (Amps)

VGS = 0 V

15

Tj = 25 C

5

0

20

10

150 C

Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS

0 20 40 60 80

Gate charge, QG (nC)

Switching times (ns)

1000

VDD = 250 V

VGS = 10 V

RD = 30 Ohms

Tj = 25 C

td(off)

100

tf

tr

td(on)

10

RG, Gate resistance (Ohms)

Fig.14. Typical switching times; _td(on), ^tr, _td(off), tf = f(RG)

0 10 20 30 40 50 60

1.15

V(BR)DSS @ Tj

V(BR)DSS @ 25 C

1.1

1.05

1

0.95

0.9

0.85

Tj, Junction temperature (C)

Fig.15. Normalised drain-source breakdown voltage;

V(BR)DSS/V(BR)DSS 25 °C = f(Tj)

100 50 0 50 100 150

Normalised Drain-source breakdown voltage

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSDS, Source-Drain voltage (Volts)

10

25 C

Tj prior to avalanche = 125 C

1

0.1

Fig.17. Maximum permissible non-repetitive
avalanche current _(IAS) versus avalanche time (t_p);
unclamped inductive load

1E-06 1E-05 1E-04 1E-03 1E-02

Avalanche time, tp (s)

Non-repetitive Avalanche current, IAS (A)

VDS ID	tp
							PHP8N50E

10

Tj prior to avalanche = 25 C

125 C

1

0.1

PHP8N50E

0.01

Fig.18. Maximum permissible repetitive avalanche
current _(IAR) versus avalanche time (t_p)

1E-06 1E-05 1E-04 1E-03 1E-02

Avalanche time, tp (s)

Maximum Repetitive Avalanche Current, IAR (A)

Fig.16. Source-Drain diode characteristic. IF = f(VSDS); parameter Tj

PowerMOS transistor IRF840

Avalanche energy rated

MECHANICAL DATA

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78

L2(¹)

b1

D1

e e

1

2

3

b

L1

q

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT	A	A1	b	b1	c	D	D1	E	e	L	L1	(1) L2 max.	P	q	Q
mm	4.5 4.1	1.39 1.27	0.9 0.7	1.3 1.0	0.7 0.4	15.8 15.2	6.4 5.9	10.3 9.7	2.54	15.0 13.5	3.30 2.79	3.0	3.8 3.6	3.0 2.7	2.6 2.2

Note

1. Terminals in this zone are not tinned.

OUTLINE VERSION	REFERENCES				EUROPEAN PROJECTION	ISSUE DATE
	IEC	JEDEC	EIAJ
SOT78		TO-220				97-06-11

c

A

A1

Q

Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)

Notes

1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling.

2. Refer to mounting instructions for SOT78 (TO220AB) package.

3. Epoxy meets UL94 V0 at 1/8".

[1] GLAISE Christian. "Introduction à l'Électrotechnique et à l'Électronique de puissance". Collection médiathèque e-EEA du club EEA. Version du 9 septembre 2002. Disponible sur le site http://www.geii.iut-nimes.fr/cg/ de l'IUT de Nîmes.

[3] GASTON Bachelard in "la Formation de l'esprit scientifique" , les composants d'électronique de puissance. Version du septembre 2004.

[3]. MOUSTAFAOUI Dris, OUAGUENI Abdelmadjid, "Étude comparative de différentes stratégies de commande des variateurs de vitesse", Mémoire de fin d'étude cycle licence département d'électrotechnique, université de M'sila 2009, dirigé par: Mr : KHODJA Djalal Eddine.

[4] MAARAD Samir, BELKHIRI Walid, "Maintenance des maquettes didactiques de l'électronique de puissance". Mémoire de fin d'étude cycle ingénieur département d'électrotechnique, université de Batna 2010, dirigé par Ms : KERCHA Mbarka.

[6] www.google.com, ChapitreII_Les_interrupteurs_semi_conducteurs.pdf.

[8] Cours Énergie et convertisseurs d'énergie, "Chapitre 2 interrupteurs semi-conducteurs de puissance", Université de Savoie Licence EEA.

[10] ACHORA Atef, HAMDI Farid, "Étude et réalisation d'une maquette d'un hacheur série à base d'une MOSFET", Mémoire de fin d'étude cycle DUEA département d'électrotechnique, université de Batna, dirigé par
Mr: Bendaas M^ed Lokman.

[8] Cours d'électronique de puissance de 4^éme année machine de Mr : Bendaas Med Lokman.

[9]

[11] http : // ww.pwrx.com.

[12] www.google.com, cours_hacheurs.pdf.

[13] http : // validator.w3.org.

[14] www.google.com, cours_hacheur4-quadrants.

[16] RAHMOUNI Abderrezak , "Commande d'un moteur à courant continu (assistée par le PIC16F84)". Mémoire de fin d'étude cycle ingénieur département d'électrotechnique, université de Batna 2004, dirigé par Mr : A.H-Haddoun et Mr : S.Drid.

[18] DRAIFA Samir, MEBARKIA Abderaouf, "Étude et réalisation d'une maquette didactique pour l'électronique de puissance (Redresseur - Gradateur - Hacheur)", Mémoire de fin d'étude cycle ingénieur département d'électrotechnique, université de Batna 2008, dirigé par Mr : Bendaas Med Lokman.

[20] LAIB Hichem, BAIDI Badiss, "Étude et réalisation d'une carde de commande d'un thyristor et d'un hacheur". Mémoire de fin d'étude cycle ingénieur département d'électrotechnique, université de Batna 2005, dirigé par Mr : Bendaas M^ed Lokman.

http : // www.eupec.com.

[10] BOUKRANA Lilia, "Étude et réalisation d'un hacheur réversible en tension", Mémoire de fin d'étude cycle DUEA département d'électrotechnique, université de Batna 2008, dirigé par Mr. Bendaas M^ed Lokman.